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参数资料
| 型号： | MP6T1TR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 32 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 104K |
| 代理商： | MP6T1TR |
MP6T1
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Collector-Emitter breakdown voltage
Collector-base breakdown voltage
<Tr1, Tr2>
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
32
40
5
120
150
20
500
390
500
V
IC
= 1mA
IC
= 50A
IE
= 50A
VCB
= 20V
VEB
= 4V
VCE
= 3V, IC= 100mA
IC/IB
= 500mA/50mA
VCE
= 5V, IE= 50mA, f=100MHz
VCB
= 10V, IE=0A, f=1MHz
V
nA
mV
MHz
pF
Typ.
Max.
Unit
Conditions
Pulsed
Electrical characteristics curves
Fig.1 Grounded Emitter
Propagation Characteristics
0
-1
-2
-5
-20
-200
-500
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
-10
-50
-100
VCE
=
6V
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta
=100 C
25 C
55 C
0
100
400
500
0.4
0.8
1.2
1.6
200
300
2.0
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded Emitter Output
Characteristics
IB
=0mA
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Ta
=25 C
COLLECTOR CURRENT : IC (mA)
Fig.3 DC Current Gain vs.
Collector Current (
Ι )
1
50
100
1000
2
5 10 20 50 100 200 500
200
500
1000
DC
CURRENT
GAIN
:
h
FE
Ta
=25 C
1V
VCE
= 3V
50
100
1000
200
500
1 2
5 10 20 50 100 200 5001000
VCE
= 3V
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (mA)
Fig.4 DC Current Gain vs.
Collector Current (
ΙΙ)
Ta
=100 C
25 C
55 C
1 2
5 10 20 50 100 200 500 10002000
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat
)(V)
COLLECTOR CURRENT : IC
(mA)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current
1
0.5
0.2
0.1
0.05
0.02
0.01
Ta
=25 C
IC/IB
=10
1
2
5
10
20
50 100
0.2
0
0.4
0.6
0.8
1.0
COLLECTOR
TO
EMITTER
VOLTAGE
:
V
CE
(V)
BASE CURRENT : IB
(mA)
Fig.6 Collector-Emitter Saturation
Voltage vs. Base Current
lC
= 500mA
lC
= 300mA
Ta
=25 C
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