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参数资料
| 型号： | MP6X3TR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封装： | MPT6, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 114K |
| 代理商： | MP6X3TR |
MP6X3
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Collector-Emitter breakdown voltage
Collector-base breakdown voltage
<Tr1, Tr2>
Emitter-base breakdown voltage
Collector cut off current
Emitter cut off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
60
6
120
200
20
1.0
390
500
1
2
V
IC
= 1mA
IC
= 100A
IE
= 100A
VCB
= 40V
VEB
= 4V
VCE
= 2V, IC= 100mA
IC/IB
= 2.0A/200mA
VCE
= 10V, IE= 100mA, f=10MHz
VCB
= 10V, IE=0A, f=1MHz
V
A
mV
MHz
pF
Turn-on time
Storage time
Fall time
ton
tstg
tf
50
150
30
IC
= 3V
IB1
= 300mA
IB2
= 300mA
VCC
25V
ns
Typ.
Max.
Unit
Conditions
1 Pulsed
2 See switching time test circuit
Electrical characteristics curves
VCE
=2V
0.01
0.1
10
1
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
0
0.5
1
1.5
2
Fig.1 Ground emitter propagation
characteristics
Ta
=100°C
Ta
=125°C
Ta
=25°C
Ta
= 40°C
0.001
0.01
0.1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
VCE
=5V
VCE
=3V
VCE
=2V
Fig.3 DC current gain vs. collector
current
Ta
=25°C
Fig.4 DC current gain vs. collector
current
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
0.001
0.01
0.1
10
1
10
100
1000
Ta
=125°C
Ta
=100°C
Ta
=25°C
Ta
= 40°C
VCE
=2V
0.001
0.1
0.01
10
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(
sat)(V)
Fig.5 Collector-emitter saturation voltage
vs. collector current
IC/IB
=10/1
IC/IB
=20/1
Ta
=25°C
0.001
0.01
0.1
0.01
0.1
1
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat
)(V)
COLLECTOR CURRENT : IC
(A)
10
1
Fig.6 Collector-emitter saturation voltage
vs. Collector Current
IC/IB
=10/1
Ta
=125°C
Ta
=100°C
Ta
=25°C
Ta
= 40°C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.5
1.0
1.5
2.0
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
IB=10mA
COLLECTOR TO EMITTER VOLTAGE：VCE(V)
Ta=25℃
Fig.2 Grounded emitter output characteristics
C
O
L
E
CT
O
R
C
URR
E
N
T
：I
C
(A
)
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| MP6Z13TR | 功能描述:TRANS ARRAY NPN/PNP 50V 3A MPT6 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 阵列 系列:- 标准包装:10,000 系列:- 晶体管类型:2 NPN（双） 电流 - 集电极 (Ic)（最大）:100mA 电压 - 集电极发射极击穿（最大）:45V Ib、Ic条件下的Vce饱和度（最大）:600mV @ 5mA，100mA 电流 - 集电极截止（最大）:- 在某 Ic、Vce 时的最小直流电流增益 (hFE):200 @ 2mA，5V 功率 - 最大:250mW 频率 - 转换:250MHz 安装类型:表面贴装 封装/外壳:6-TSSOP，SC-88，SOT-363 供应商设备封装:PG-SOT363-6 包装:带卷 (TR) 其它名称:SP000747402 |
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