参数资料
型号: MPC8544ECVTANGA
厂商: Freescale Semiconductor
文件页数: 115/117页
文件大小: 0K
描述: IC MPU POWERQUICC III 783-FCBGA
标准包装: 36
系列: MPC85xx
处理器类型: 32-位 MPC85xx PowerQUICC III
速度: 800MHz
电压: 0.95 V ~ 1.05 V
安装类型: 表面贴装
封装/外壳: 783-BBGA,FCBGA
供应商设备封装: 783-FCPBGA(29x29)
包装: 托盘
MPC8544E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 6
Freescale Semiconductor
97
Thermal
Table 71 provides the thermal resistance with heat sink in open flow.
Simulations with heat sinks were done with the package mounted on the 2s2p thermal test board. The
thermal interface material was a typical thermal grease such as Dow Corning 340 or Wakefield 120 grease.
For system thermal modeling, the MPC8544E thermal model without a lid is shown in Figure 60. The
substrate is modeled as a block 29
× 29 × 1.18 mm with an in-plane conductivity of 18.0 W/mK and a
through-plane conductivity of 1.0 W/mK. The solder balls and air are modeled as a single block
29
× 29 × 0.58 mm with an in-plane conductivity of 0.034 W/mK and a through plane conductivity of
12.1 W/mK. The die is modeled as 7.6
× 8.4 mm with a thickness of 0.75 mm. The bump/underfill layer
is modeled as a collapsed thermal resistance between the die and substrate assuming a conductivity of
6.5 W/mK in the thickness dimension of 0.07 mm. The die is centered on the substrate. The thermal model
uses approximate dimensions to reduce grid. Please refer to Figure 59 for actual dimensions.
20.2
Recommended Thermal Model
Table 72 shows the MPC8544E thermal model.
Table 71. Thermal Resistance with Heat Sink in Open Flow
Heat Sink with Thermal Grease
Air Flow
Thermal Resistance (
° C/W)
Wakefield 53
× 53 × 25 mm pin fin
Natural convection
6.1
Wakefield 53
× 53 × 25 mm pin fin
1 m/s
3.0
Aavid 35
× 31 × 23 mm pin fin
Natural convection
8.1
Aavid 35
× 31 × 23 mm pin fin
1 m/s
4.3
Aavid 30
× 30 × 9.4 mm pin fin
Natural convection
11.6
Aavid 30
× 30 × 9.4 mm pin fin
1 m/s
6.7
Aavid 43
× 41 × 16.5 mm pin fin
Natural convection
8.3
Aavid 43
× 41 × 16.5 mm pin fin
1 m/s
4.3
Table 72. MPC8544EThermal Model
Conductivity
Value
Units
Die (7.6
× 8.4 × 0.75mm)
Silicon
Temperature dependent
Bump/Underfill (7.6
× 8.4 × 0.070 mm) Collapsed Thermal Resistance
Kz
6.5
W/mK
Substrate (29
× 29 × 1.18 mm)
Kx
18
W/mK
Ky
18
Kz
1.0
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