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参数资料
| 型号： | MPF4856RLRM |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 167K |
| 代理商： | MPF4856RLRM |
MPF4856
http://onsemi.com
784
IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA)
,DRAIN-SOURCE
ON-ST
AT
E
ds(on)r
20
10
30
40
50
30 40 50 60 70
20
RESIST
ANCE
(OHMS)
0
10
0
1.0
2.0
3.0
4.0
5.0
,GA
TE-SOURCE
VOL
TAGE
GS
V
(VOL
TS)
6.0
7.0
8.0
9.0
10
70
60
80
90
100
80 90 100 110 120 130 140 150
NOTE 2
The Zero–Gate–Voltage Drain Current (IDSS), is the
principle determinant of other J–FET characteristics.
Figure 10 shows the relationship of Gate–Source Off
Voltage (VGS(off)) and Drain–Source On Resistance
(rds(on)) to IDSS. Most of the devices will be within
±10% of the values shown in Figure 10. This data will
be useful in predicting the characteristic variations
for a given part number.
For example:
Unknown
rds(on) and VGS range for an MPF4392
The electrical characteristics table indicates that an
MPF4392 has an IDSS range of 25 to 75 mA. Figure
10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30
Ohms for IDSS = 75 mA. The corresponding VGS val-
ues are 2.2 volts and 4.8 volts.
Figure 10. Effect of IDSS On Drain–Source
Resistance and Gate–Source Voltage
Tchannel = 25°C
rDS(on) @ VGS = 0
VGS(off)
相关PDF资料 |
PDF描述 |
|---|---|
| MPF4856RLRP | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856 | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RLRF | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RLRB | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| MPF4856RL1 | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
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