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参数资料
| 型号： | MPF930A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | CASE 29-11, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 57K |
| 代理商： | MPF930A |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MPF930/D
MPF930, MPF960, MPF990
Preferred Device
Small Signal MOSFET
2 Amps, 35, 60, 90 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
Symbol
MPF930
MPF960
MPF990
Unit
Drain–Source
Voltage
VDS
35
60
90
Vdc
Drain–Gate Voltage
VDG
35
60
90
Vdc
Gate–Source
Voltage
– Continuous
– Non–repetitive
(tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
(Note 1.)
Pulsed (Note 2.)
ID
IDM
2.0
3.0
Adc
Total Device
Dissipation
@ TA = 25°C
Derate above
25
°C
PD
1.0
8.0
Watts
mW/
°C
Operating and
Storage Junction
Temperature
Range
TJ, Tstg
–55 to 150
°C
Thermal Resistance
θJA
125
°C/W
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
MPF930
ORDERING INFORMATION
Y
= Year
WW
= Work Week
YWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO–92
CASE 29
Style 22
N–Channel
S
1 2
3
1
Source
3
Drain
2
Gate
2 AMPERES
35, 60, 90 VOLTS
RDS(on) = 0.7 (MPF930)
RDS(on) = 0.8 (MPF960)
RDS(on) = 1.2 (MPF990)
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
相关PDF资料 |
PDF描述 |
|---|---|
| MPF990 | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPF960 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPF930 | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPG06J-E3 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| MPL1TR | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPF960 | 功能描述:MOSFET N-CH 60V 2A TO-92 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MPF990 | 功能描述:MOSFET N-CH 90V 2A TO-92 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MPFA403PMJ22BA | 制造商:ALLEN 功能描述:AC SERVI NITIR |
| MPF-A403P-MJ22BA | 制造商:ALLEN 功能描述:AC SERVI NITIR |
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