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参数资料
| 型号： | MPF930A |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | CASE 29-11, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 57K |
| 代理商： | MPF930A |
MPF930, MPF960, MPF990
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 Adc)
MPF930
MPF960
MPF990
V(BR)DSX
35
60
90
–
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
–
50
nAdc
ON CHARACTERISTICS (Note 2.)
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
IDSS
–
10
Adc
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
–
3.5
Vdc
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
MPF930
MPF960
MPF990
(ID = 1.0 Adc)
MPF930
MPF960
MPF990
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
VDS(on)
–
0.4
0.6
0.9
1.2
2.2
2.8
0.7
0.8
1.2
1.4
1.7
2.4
3.0
3.5
4.8
Vdc
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 1.0 Adc)
MPF930
MPF960
MPF990
rDS(on)
–
0.9
1.2
1.4
1.7
2.0
On–State Drain Current
(VDS = 25 Vdc, VGS = 10 Vdc)
ID(on)
1.0
2.0
–
Amps
SMALL–SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
–
70
–
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
–
20
–
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
–
49
–
pF
Forward Transconductance
(VDS = 25 Vdc, ID = 0.5 Adc)
gfs
200
380
–
mmhos
SWITCHING CHARACTERISTICS
Turn–On Time
ton
–
7.0
15
ns
Turn–Off Time
toff
–
7.0
15
ns
2. Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
相关PDF资料 |
PDF描述 |
|---|---|
| MPF990 | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPF960 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPF930 | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPG06J-E3 | 1 A, 600 V, SILICON, SIGNAL DIODE |
| MPL1TR | 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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