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参数资料
| 型号： | MPF990RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | CASE 29-11, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 57K |
| 代理商： | MPF990RLRA |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
Publication Order Number:
MPF930/D
MPF930, MPF960, MPF990
Preferred Device
Small Signal MOSFET
2 Amps, 35, 60, 90 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
Symbol
MPF930
MPF960
MPF990
Unit
Drain–Source
Voltage
VDS
35
60
90
Vdc
Drain–Gate Voltage
VDG
35
60
90
Vdc
Gate–Source
Voltage
– Continuous
– Non–repetitive
(tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
(Note 1.)
Pulsed (Note 2.)
ID
IDM
2.0
3.0
Adc
Total Device
Dissipation
@ TA = 25°C
Derate above
25
°C
PD
1.0
8.0
Watts
mW/
°C
Operating and
Storage Junction
Temperature
Range
TJ, Tstg
–55 to 150
°C
Thermal Resistance
θJA
125
°C/W
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
MPF930
ORDERING INFORMATION
Y
= Year
WW
= Work Week
YWW
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENT
D
G
TO–92
CASE 29
Style 22
N–Channel
S
1 2
3
1
Source
3
Drain
2
Gate
2 AMPERES
35, 60, 90 VOLTS
RDS(on) = 0.7 (MPF930)
RDS(on) = 0.8 (MPF960)
RDS(on) = 1.2 (MPF990)
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
相关PDF资料 |
PDF描述 |
|---|---|
| MPF960RLRA | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF930A | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF990 | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPF960 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| MPF930 | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
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