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参数资料
| 型号： | MPQ6001 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
| 封装： | PLASTIC, DIP-14 |
| 文件页数： | 1/34页 |
| 文件大小： | 333K |
| 代理商： | MPQ6001 |
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2–503
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Complementary Pair
Transistors
NPN/PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
30
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Device Dissipation
@ TA = 25°C(1)
MPQ6001, MPQ6002,
MPQ6502
Derate above 25
°C
MPQ6001, MPQ6002,
MPQ6502
PD
0.65
5.18
1.25
10
Watts
mW/
°C
Total Device Dissipation
@ TC = 25°C
MPQ6001, MPQ6002,
MPQ6502
Derate above 25
°C
MPQ6001, MPQ6002,
MPQ6502
PD
1.0
8.0
3.0
24
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
MPQ6001, MPQ6002, MPQ6502
Effective, 4 Die
MPQ6001, MPQ6002, MPQ6502
125
41.6
193
100
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
MPQ6001, MPQ6002, MPQ6502
Q1–Q2 or Q3–Q4
MPQ6001, MPQ6002, MPQ6502
30
20
60
24
%
1. Voltage and Current are negative for PNP devices.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ6001
MPQ6002
MPQ6502
CASE 646–06, STYLE 1
TO–116
1
14
Voltage and current are negative
for PNP transistors
1
2
3
4
567
14
13
12
11
10
9
8
1
2
3
4
567
14
13
12
11
10
9
8
COMPLEMENTARY
MPQ6001, MPQ6002
TYPE A
MPQ6502
TYPE B
REV 3
相关PDF资料 |
PDF描述 |
|---|---|
| MPQ6002 | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ6502 | 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116 |
| MPQ6426 | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| MPQ6600A1 | 50 mA, 45 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| MPQ6842 | 200 mA, 30 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPQ6001N | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS |
| MPQ6002 | 功能描述:两极晶体管 - BJT Quad NPN/PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPQ6002N | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS |
| MPQ6100A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPQ6400 | 制造商:MPS 制造商全称:Monolithic Power Systems 功能描述:Low Quiescent Current Programmable-Delay Supervisory Circuit |
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