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参数资料
| 型号： | MPQ6426 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| 封装： | PLASTIC, DIP-14 |
| 文件页数： | 1/34页 |
| 文件大小： | 326K |
| 代理商： | MPQ6426 |
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2–506
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad Darlington
Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
30
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Each Die
Four Die
Equal
Power
Total Device Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
500
4.0
900
7.2
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
825
6.7
2400
19.2
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction to
Case
Junction to
Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151
52
250
139
°C/W
Coupling Factors
Q1–Q4 or Q2–Q3
Q1–Q2 or Q3–Q4
34
2.0
70
26
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
30
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
12
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
—
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
—
100
nAdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPQ6426
CASE 646–06, STYLE 1
TO–116
1
14
12
3
4
5
6
7
14
13
12
11
10
9
8
NPN
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPQ6501 | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, Array, Independent, TO-116 |
| MPQ6501N | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS |
| MPQ6502 | 功能描述:两极晶体管 - BJT Quad PNP/NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPQ6502N | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS |
| MPQ6600A1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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