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参数资料
| 型号： | MPS2907-L-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 239K |
| 代理商： | MPS2907-L-BP |
MPS2907A-L/H
PNP Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 0.625Watts of Power Dissipation.
Collector-current -0.6A
Collector-base Voltage -60V
Operating and storage junction temperature range: -55
OC to
+150
OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-10mAdc, IB=0)
MPS2907
MPS2907A
-40
-60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-10uAdc, IE=0)
-60
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10uAdc, IC=0)
-5.0
---
Adc
ICBO
Collector Cutoff Current
(VCB=-50Vdc, IE=0)
MPS2907
MPS2907A
---
-0.1
-0.01
uAdc
ICEO
Collector Cutoff Current
(VCE=-35Vdc, IE=0)
MPS2907
MPS2907A
---
-0.1
-0.05
Vdc
IEBO
Emitter Cutoff Current
(VEB=-3.0Vdc, IC=0)
MPS2907
MPS2907A
---
-0.1
-0.01
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=-150mAdc, VCE=-10Vdc)
100
300
---
hFE-2
DC Current Gain
(IC=-1.0mAdc, VCE=-10Vdc)
MPS2907
60
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-0.6
Vdc
V(BE)sat
Base-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.2
Vdc
fT
Transition Frequency
(VCE=-20Vdc, IC=-50mAdc, f=100MHz)
MHz
CLASSIFICATION OF HFE
Rank
L
H
Range
100-200
200-300
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.45
4.70
C
.500
---
12.70
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
DIMENSIONS
TO-92
www.mccsemi.com
1 of 2
Marking
: MPS2907/MPS2907A
200
---
MPS2907-L/H
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
E
B
C
相关PDF资料 |
PDF描述 |
|---|---|
| MPS2907A-L-AP | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS2907A-L-BP | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS2907A-H-BP | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3568RLRM | 600 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3568RLRP | 600 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS2907RLRM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPS2907RLRP | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MPS2923 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 500MA I(C) | TO-92 |
| MPS2924 | 功能描述:NPN SS GP AMP TRANSISTOR TO92 RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| MPS2925 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
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