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参数资料
| 型号： | MPS2907A/E7 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | MPS2907A/E7 |
MPS2907A
Vishay Semiconductors
formerly General Semiconductor
Document Number 88232
www.vishay.com
10-May-02
1
New Product
Small Signal Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
On special request, this transistor is also
manufactured in the pin configuration TO-18.
This transistor is also available in the SOT-23 case
with the type designation MMBT2907A.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Collector-Base Voltage
–VCBO
60
V
Collector-Emitter Voltage
–VCEO
60
V
Emitter-Base Voltage
–VEBO
5.0
V
Collector Current
–IC
600
mA
Power Dissipation
TA = 25°C
Ptot
625
mW
Derate above 25°C
5.0
mW/°C
Power Dissipation
TC = 25°C
Ptot
1.5
mW
Derate above 25°C
12
mW/°C
Thermal Resistance Junction to Ambient Air
R
ΘJA
200(1)
°C/W
Thermal Resistance Junction to Case
R
ΘJC
83.3
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Note:
(1) Valid provided that leads are kept at ambient temperature.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)
相关PDF资料 |
PDF描述 |
|---|---|
| MPS2907A | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| MPS2907TPE2 | VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3563 | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-226AA |
| MPS3638AG | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| MPS3694 | 50 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS2907AG | 功能描述:两极晶体管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2907AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MPS2907A-H | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MPS2907A-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MPS2907ARL | 功能描述:两极晶体管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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