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参数资料
| 型号： | MPS2907A/E7 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA |
| 封装： | PLASTIC, TO-92, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 代理商： | MPS2907A/E7 |
MPS2907A
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88232
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
–VCE = 10V, –IC = 0.1mA
75
——
—
–VCE = 10V, –IC = 1mA
100
——
—
DC Current Gain
hFE
–VCE = 10V, –IC = 10mA
100
——
—
–VCE = 10V, –IC = 150mA
(1)
100
300
—
–VCE = 10V, –IC = 500mA
(1)
50
——
Collector-Base Breakdown Voltage
–V(BR)CBO
–IC = 10
A, IE = 0
60
——
V
Collector-Emitter Breakdown Voltage(1)
–V(BR)CEO
–IC = 10mA, IB = 0
60
——
V
Emitter-Base Breakdown Voltage
–V(BR)EBO
–IE = 10
A, IC = 0
5
——
V
Collector-Emitter Saturation Voltage(1)
–VCEsat
–IC = 150mA, –IB = 15mA
——
0.4
V
–IC = 500mA, –IB = 50mA
——
1.6
Base-Emitter Saturation Voltage(1)
–VBEsat
–IC = 150mA, –IB = 15mA
——
1.3
V
–IC = 500mA, –IB = 50mA
——
2.6
Collector Cut-off Current
–ICEV
–VEB = 0.5V, –VCE = 30V
——
50
nA
Collector Cut-off Current
–ICBO
–VCB = 50V, IE = 0
——
0.01
A
–VCB =50V, IE =0,TA =150°C
——
10
Base Cut-off Current
–IBL
–VEB = 0.5V, –VCE = 30V
——
50
nA
Current Gain-Bandwidth Product
fT
–VCE = 20V, –IC = 50mA
200
——
MHz
f = 100MHz
Output Capacitance
Cobo
–VCB = 10V, f = 1MHz, IE = 0
——
8.0
pF
Emitter-Base Capacitance
Cibo
–VEB = 2.0V, f = 1MHz, IC =0
——
30
pF
Notes:
(1) Pulse Test: Pulse width
≤ 300 s, duty cycle ≤ 2.0%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS2907AG | 功能描述:两极晶体管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPS2907AG | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR |
| MPS2907A-H | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MPS2907A-L | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| MPS2907ARL | 功能描述:两极晶体管 - BJT 600mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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