参数资料
型号: MPS8050S-C
元件分类: 小信号晶体管
英文描述: 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: SOT-23, 3 PIN
文件页数: 1/2页
文件大小: 391K
代理商: MPS8050S-C
2003. 3. 25
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8050S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to MPS8550S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=35V, IE=0
-
100
nA
Emitter Cut-off Current
IEBO
VEB=6V, IC=0
-
100
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=100 A, IE=0
40
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=2mA, IB=0
25
-
V
DC Current Gain
hFE(1)
VCE=1V, IC=5mA
45
135
-
hFE(2) (Note)
VCE=1V, IC=100mA
85
160
300
hFE(3)
VCE=1V, IC=800mA
40
110
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=800mA, IB=80mA
-
0.28
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=800mA, IB=80mA
-
0.98
1.2
V
Base-Emitter Voltage
VBE
VCE=1V, IC=10mA
-
0.66
1.0
V
Transition Frequency
fT
VCE=10V, IC=50mA
100
190
-
MHz
Collector Output Capacitance
Cob
VCB=10V, f=1MHz, IE=0
-
9
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Collector Power Dissipation
PC *
350
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Note : hFE(2) Classification
B:85 160 , C : 120 200 , D : 160 300
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
h
Rank
Type Name
Marking
Lot No.
BH
FE
相关PDF资料
PDF描述
MPS8050 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS8050B 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS8050D 1500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS8093 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPS8093RLRP 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
MPS8097 功能描述:两极晶体管 - BJT NPN Gen Pur SS RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS8098 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MPS8098_01 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN General Purpose Amplifier
MPS8098_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors
MPS8098_D26Z 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2