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参数资料
| 型号： | MPSA05 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Amplifier Transistors Voltage and Current are Negative for PNP Transistors(放大器晶体管) |
| 中文描述： | 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 81K |
| 代理商： | MPSA05 |
(NPN) MPSA05, MPSA06*, (PNP) MPSA55, MPSA56*
http://onsemi.com
5
Figure 14. MPSA05/06 Collector Saturation
Region
Figure 15. MPSA55/56 Collector Saturation
Region
Figure 16. MPSA05/06 BaseEmitter
Temperature Coefficient
Figure 17. MPSA55/56 BaseEmitter
Temperature Coefficient
100
500
0.5
I
C
, COLLECTOR CURRENT (mA)
0.8
1.2
1.6
2.0
2.4
2.8
I
C
, COLLECTOR CURRENT (mA)
0.1
10
0.05
I
B
, BASE CURRENT (mA)
1.0
0.8
0.6
0.4
0.2
0
I
B
, BASE CURRENT (mA)
1.0
T
J
= 25
°
C
RV
NPN
PNP
10
R
VB
for V
BE
°
RV
°
50
I
C
=
100 mA
I
C
=
50 mA
I
C
=
250 mA
I
C
=
500 mA
I
C
=
10 mA
,
VC
,
VC
1.0
2.0
5.0
20
50
200
20
2.0
5.0
0.2
0.5
100
500
0.5
0.8
1.2
1.6
2.0
2.4
2.8
10
R
VB
for V
BE
1.0 2.0
5.0
20
50
200
0.1
10
0.05
1.0
0.8
0.6
0.4
0.2
0
1.0
T
J
= 25
°
C
50
I
C
=
100 mA
I
C
=
50 mA
I
C
=
250 mA
I
C
=
500 mA
I
C
=
10 mA
20
2.0
5.0
0.2
0.5
Figure 18. MPSA05, MPSA06, MPSA55 and MPSA56 Thermal Response
t, TIME (ms)
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r
T
Z
JC
(t) = r(t)
R
JC
T
J(pk)
T
C
= P
(pk)
Z
JC
(t)
Z
JA
(t) = r(t)
R
JA
T
J(pk)
T
A
= P
(pk)
Z
JA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
SINGLE PULSE
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PDF描述 |
|---|---|
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS-A05 | 制造商:ON Semiconductor 功能描述: |
| MPSA05 D27Z | 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 60V TO-92 |
| MPSA05_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistors Voltage and Current are Negative for PNP Transistors |
| MPSA05_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Amplifier Transistors |
| MPSA05_D26Z | 功能描述:两极晶体管 - BJT NPN Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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