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参数资料
| 型号： | MPSA29 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Darlington Transistors NPN Silicon(NPN达林顿晶体管) |
| 中文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-11, TO-226AA, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 56K |
| 代理商： | MPSA29 |
MPSA28, MPSA29
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 100 Adc, V
BE
= 0)
MPSA28
MPSA29
V
(BR)CES
80
100
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
MPSA28
MPSA29
V
(BR)CBO
80
100
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
12
Vdc
Collector Cutoff Current
(V
CB
= 60 Vdc, I
E
= 0)
(V
CB
= 80 Vdc, I
E
= 0)
MPSA28
MPSA29
I
CBO
100
100
nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
BE
= 0)
(V
CE
= 80 Vdc, V
BE
= 0)
MPSA28
MPSA29
I
CES
500
500
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
100
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
10,000
10,000
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.01 mAdc)
(I
C
= 100 mAdc, I
B
= 0.1 mAdc)
V
CE(sat)
0.7
0.8
1.2
1.5
Vdc
BaseEmitter On Voltage
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
1.4
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
fT
125
200
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
2. f
T
= h
fe
f
test
.
Cobo
5.0
8.0
pF
300 s, Duty Cycle
2.0%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPS-A29 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 500MA I(C) | TO-92 |
| MPSA29 D27Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Bipolar Transistor |
| MPSA29_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
| MPSA29_D26Z | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| MPSA29_D27Z | 功能描述:达林顿晶体管 NPN Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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