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参数资料
| 型号： | MPSA44 |
| 厂商： | KEC Holdings |
| 英文描述： | EPITAXIAL PLANAR NPN TRANSISTOR (HIGH VOLTAGE) |
| 中文描述： | 外延平面NPN晶体管（高压） |
| 文件页数： | 2/3页 |
| 文件大小： | 660K |
| 代理商： | MPSA44 |
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
400
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
400
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
=
100
Adc, I
C
= 0)
V
(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(V
CB
=
300
Vdc, I
E
= 0)
I
CBO
—
0.1
μ
Adc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(1)
I
EBO
—
0.1
μ
Adc
DC Current Gain
(1)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
=
100
mAdc, V
CE
= 10 Vdc)
h
FE
70
80
60
300
Collector–Emitter Saturation Voltage
(1)
(I
C
=
10
mAdc, I
B
=
1.0
mAdc)
(I
C
=
50
mAdc, I
B
=
5.0
mAdc)
V
CE(sat)
—
—
0.2
0.3
Vdc
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
BE(sat)
—
0.75
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
—
7.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
—
130
pF
Small–Signal Current Gain
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 20 MHz)
h
fe
1.0
—
—
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
M C C
MPSA4
4
www.
mc c semi
.c om
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSA44 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-92 |
| MPSA44_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage Transistor |
| MPSA44_11 | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon High Voltage Transistor 625mW |
| MPSA44_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR |
| MPSA44-AP | 制造商:Micro Commercial Components (MCC) 功能描述:Trans GP BJT NPN 400V 0.2A 3-Pin TO-92 Ammo |
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