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参数资料
| 型号： | MPSW01RL1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-226AE, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 137K |
| 代理商： | MPSW01RL1 |
MPSW01 MPSW01A
http://onsemi.com
901
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 1000 mAdc, VCE = 1.0 Vdc)
hFE
55
60
50
—
Collector–Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 100 mAdc)
VCE(sat)
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 1000 mAdc, VCE = 1.0 Vdc)
VBE(on)
—
1.2
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
20
pF
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficient
50
500
10
IC, COLLECTOR CURRENT (mA)
300
200
70
50
30
IB, BASE CURRENT (mA)
1.0
0.8
0.6
0.4
0
IC, COLLECTOR CURRENT (mA)
1.0
0.8
0
IC, COLLECTOR CURRENT (mA)
1.0
-1.2
-1.6
-2.0
-2.4
-2.8
2.0
VCE = 1.0 V
TJ = 25°C
h
V,
VOL
TAGE
(VOL
TS)
q
20
100
0.05
10
0.01 0.02
0.1 0.2
,COLLECT
OR
VOL
TAGE
(VOL
TS)
200
1000
100
20
50 100
0.2
V CE
0.2
0.6
0.4
-0.8
5.0 10 20
50 100 200
,CURRENT
GAIN
FE
0.5 1.0 2.0 5.0
TJ = 25°C
500 1000
qVB FOR VBE
TJ = 25°C
1.0 2.0 5.0 10 20
50 100 200 500 1000
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
IC =
1000 mA
IC =
500 mA
IC =
10 mA
IC =
50 mA
IC =
100 mA
IC =
250 mA
,TEMPERA
TURE
COEFFICIENT
(mV/
C)°
VB
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