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参数资料
| 型号： | MPSW01RLRA |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-226AE, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 137K |
| 代理商： | MPSW01RLRA |
One Watt High Current
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
MPSW01
MPSW01A
VCEO
30
40
Vdc
Collector–Base Voltage
MPSW01
MPSW01A
VCBO
40
50
Vdc
Emitter–Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPSW01
MPSW01A
V(BR)CEO
30
40
—
Vdc
Collector–Base Breakdown Voltage
(IC = 100 Adc, IE = 0)
MPSW01
MPSW01A
V(BR)CBO
40
50
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPSW01
(VCB = 40 Vdc, IE = 0)
MPSW01A
ICBO
—
0.1
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
0.1
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
900
Publication Order Number:
MPSW01/D
MPSW01
MPSW01A
*ON Semiconductor Preferred Device
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
1
2
3
*
COLLECTOR
3
2
BASE
1
EMITTER
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