- 您现在的位置：买卖IC网 > PDF目录378674 > MPSW55 (ON SEMICONDUCTOR) One Watt Amplifier Transistors(PNP Silicon) PDF资料下载
参数资料
| 型号： | MPSW55 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | One Watt Amplifier Transistors(PNP Silicon) |
| 中文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-10, TO-226AE, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 141K |
| 代理商： | MPSW55 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MPSW55
MPSW56
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
PD
–60
–80
Vdc
Collector–Base Voltage
–60
–80
Vdc
Emitter–Base Voltage
–4.0
Vdc
Collector Current — Continuous
–500
mAdc
Total Device Dissipation @ TA = 25
°
C
Derate above 25
°
C
1.0
8.0
Watt
mW/
°
C
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
2.5
20
Watts
mW/
°
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RJA
RJC
125
°
C/W
Thermal Resistance, Junction to Case
50
°
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
MPSW55
MPSW56
V(BR)CEO
–60
–80
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
Collector Cutoff Current
(VCE = –40 Vdc, IB = 0)
(VCE = –60 Vdc, IB = 0)
MPSW55
MPSW56
ICES
—
—
–0.5
–0.5
μ
Adc
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –60 Vdc, IE = 0)
MPSW55
MPSW56
ICBO
—
—
–0.1
–0.1
μ
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
μ
Adc
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW55/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
23
COLLECTOR
3
2
BASE
1
EMITTER
相关PDF资料 |
PDF描述 |
|---|---|
| MPX12GSX | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX12 | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX12D | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX12DP | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX12GP | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MPSW55_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:One Watt Amplifier Transistors |
| MPSW55G | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW55RLRA | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW55RLRAG | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW56 | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。