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| 型号： | MPSW55 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | One Watt Amplifier Transistors(PNP Silicon) |
| 中文描述： | 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | CASE 29-10, TO-226AE, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 141K |
| 代理商： | MPSW55 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min
Max
Unit
DC Current Gain
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –250 mAdc, VCE = –1.0 Vdc)
hFE
100
50
—
—
—
Collector–Emitter Saturation Voltage
(IC = –250 mAdc, IB = –10 mAdc)
VCE(sat)
—
–0.5
Vdc
Base–Emitter On Voltage
(IC = –250 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(on)
—
–1.2
Vdc
Current–Gain — Bandwidth Product
(IC = –250 mAdc, VCE = –5.0 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = –10 Vdc, f = 1.0 MHz)
Cobo
—
15
pF
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
400
–0.5
–0.7
–1.0
–2.0
–3.0
–5.0
–7.0
–10
–20
–30
–50
–70
–100
–200
200
100
80
60
40
h
TJ = 125
°
C
25
°
C
–55
°
C
VCE = –1.0 V
–300
–500
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
V
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.05
–0.1
–10
–1.0
TJ = 25
°
C
IC = –10 mA
–0.2
–0.5
–2.0
–5.0
–20
–50
–100 mA
–250 mA
–500 mA
–50
mA
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V
–1.0
–0.8
–0.6
–0.4
–0.2
0
–0.5
TJ = 25
°
C
VBE(on) @ VCE = –1.0 V
VCE(sat) @ IC/IB = 10
VBE(sat) @ IC/IB = 10
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
–500
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| MPSW55_10 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:One Watt Amplifier Transistors |
| MPSW55G | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW55RLRA | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW55RLRAG | 功能描述:两极晶体管 - BJT 500mA 60V 1W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MPSW56 | 功能描述:两极晶体管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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