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参数资料
| 型号： | MR0A08BYS35R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 8/23页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 1MBIT 35NS 44TSOP |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 1M (128K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 带卷 (TR) |
MR0A08B
Power Up and Power Down Sequencing
The MRAM is protected from write operations whenever V DD is less than V WI . As soon as V DD exceeds
V DD (min), there is a startup time of 2 ms before read or write operations can start. This time allows memory
power supplies to stabilize.
The E and W control signals should track V DD on power up to V DD - 0.2 V or V IH (whichever is lower) and
remain high for the startup time. In most systems, this means that these signals should be pulled up with a
resistor so that signal remains high if the driving signal is Hi-Z during power up. Any logic that drives E and
W should hold the signals high with a power-on reset signal for longer than the startup time.
During power loss or brownout where V DD goes below V WI , writes are protected and a startup time must be
observed when power returns above V DD (min).
Figure 3 – Power Up and Power Down Diagram
V WI
V DD
BROWNOUT or POWER LOSS
2 ms
STARTUP
2 ms
RECOVER
READ/WRITE
INHIBITED
NORMAL
OPERATION
READ/WRITE
INHIBITED
NORMAL
OPERATION
V IH
V IH
E
W
Copyright ? 2013 Everspin Technologies
8
MR0A08B Rev. 8, 10/2013
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相关代理商/技术参数 |
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| MR0A16A | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A16ACMA35 | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0A16ACMA35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR0A16ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR0A16ACYS35 | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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