参数资料
| 型号： | MR2535L |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | DIODE TVS SURGE 6A 20V AXIAL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 1,000 |
| 电压 - 反向隔离（标准值）： | 20V |
| 电压 - 击穿： | 24V |
| 电极标记： | 双向 |
| 安装类型： | 通孔 |
| 封装/外壳： | 按钮，轴向 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
MR2535L
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction?to?Lead @ Both Leads to Heatsink,
Equal Length
Thermal Resistance Junction?to?Case
Lead Length
1/4 ″
3/8 ″
1/2 ″
Symbol
R q JL
R q JC
Max
7.5
10
13
0.8
(Note 1)
Unit
° C/W
° C/W
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Instantaneous Forward Voltage (Note 2) (i F = 100 A, T C = 25 ° C)
Reverse Current (V R = 20 Vdc, T C = 25 ° C)
Breakdown Voltage (Note 2) (I R = 100 mAdc, T C = 25 ° C)
Breakdown Voltage (Note 2) (I R = 90 A, T C = 150 ° C, PW = 80 m s)
Breakdown Voltage Temperature Coefficient
Symbol
v F
I R
V (BR)
V (BR)
V (BR)TC
Min
?
?
24
?
?
Max
1.1
200
32
40
0.096
Unit
V
nAdc
V
V
%/ ° C
(Note 1)
Forward Voltage Temperature Coefficient @ I F = 10 mA
V FTC
?
2
mV/ ° C
(Note 1)
1. Typical.
2. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
1000
100
T J = 125 ° C
75 ° C
1000
100
10
V R = 20 V
25 ° C
1
10
0.1
1
0.01
600
700
800
900
1000
25
50
75
100
125
150
4000
V F , INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 1. Typical Forward Voltage
25
T J , JUNCTION TEMPERATURE ( ° C)
Figure 2. Typical Reverse Current versus
Junction Temperature
3500
T J = 25 ° C
20
Both leads to heatsink with equal length
I F(peak) /I F(avg) = p
3000
15
2500
10 mm
L = 6.25 mm
2000
1500
1000
10
5
0
15 mm
0
5
10
15
20
25
20
40
60
80
100
120
140
160
180
V R , DC BLOCKING VOLTAGE (V)
Figure 3. Typical Capacitance
http://onsemi.com
2
T L , LEAD TEMPERATURE ( ° C)
Figure 4. Maximum Current Ratings
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