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参数资料
| 型号： | MR2A16ACMA35R |
| 厂商： | Everspin Technologies Inc |
| 文件页数： | 19/20页 |
| 文件大小： | 0K |
| 描述： | IC MRAM 4MBIT 35NS 48BGA |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | MRAM（磁阻 RAM） |
| 存储容量： | 4M (256K x 16) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-FBGA（8x8） |
| 包装： | 带卷 (TR) |
MR2A16A
REVISION HISTORY
Revision
5
6
7
8
9
10
10.1
11
Date
Sept 21, 2007
Nov 12, 2007
Sep 12, 2008
July 22, 2009
Dec 16, 2011
August 29, 2012
July 30, 2013
October 4, 2013
Description of Change
Changed MR2A16ATS35C product description to Legacy Commercial. Added the New Com -
merical temperature product (MR2A16AYS35) information. Table 3: MR2A16AYS35 Hmax -
write=25 Oe. Table 4: MR2A16AYS35 has a 2 ms power up waiting period. Table 6: Applied
values to TBD’s in IDD specifications.
Table 2: Changed IDDA to IDDR or IDDW. Table 13: Added noteindicating that TS and YS are
both valid package codes. Current Part Numbering System: Added commercial (missing let -
ter) temperature range.
Reformat Datasheet for EverSpin, Add BGA Packaging Information, Add Tape & Reel Part
Numbers, Add Power Sequencing Info, Correct IOH spec of VOH to -100 uA, Correct ac Test
Conditions.
Add TSOP2 Lead Cross-Section, Add Production Note. Converted to new document format.
Added AEC-Q100 Grade 1 product option for TSOP2 package to Table 4.1. Revised Tables
2.1, 2.2 and 4.1 to include AEC-Q100 Grade 1 specifications. New logo design.
Corrected error in Table 1.1. Corrected Figure 2.1. Improved magnetic immunity for Indus -
trial and Extended Grades. Corrected minor errors in Table 4.1 Product Numbering.
Corrected G to read G for 44-TSOP Type2 in Figure 1.2.
MR2A16AMYS35/R is released from Preliminary to fully qualified. Reformatted to meet cur -
rent standards.
Copyright ? Everspin Technologies 2013
19
MR2A16A Rev. 11, 10/2013
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| XF2M-3815-1A | CONN FPC 38POS 0.5MM PITCH SMD |
| MR2A08ACYS35R | IC MRAM 4MBIT 35NS 44TSOP |
| MR2A08ACMA35R | IC MRAM 4MBIT 35NS 48BGA |
| MR2A08AYS35R | IC MRAM 4MBIT 35NS 44TSOP |
| MR2A16AMA35R | IC MRAM 4MBIT 35NS 48BGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16ACYS35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| MR2A16AMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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