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| 型号： | MR751 |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 96K |
| 描述： | DIODE STD REC 6A 100V AXIAL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 1,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 6A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 900mV @ 6A |
| 速度： | 标准恢复 >500ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 25µA @ 100V |
| 安装类型： | 通孔 |
| 封装/外壳： | 按钮，轴向 |
| 供应商设备封装： | Microde 按钮 |
| 包装： | 散装 |
MR750 SERIES
http://onsemi.com
5
Figure 9. Rectification Efficiency Figure 10. Reverse Recovery Time
REPETITION FREQUENCY (kHz)
2.0
20
1.0
100
50
30
3.0 5.0 1007.0 10 20 30 50
70
RELATIVE EFFICIENCY (%)
70
TJ
= 25
°C
CURRENT INPUT WAVEFORM
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
0.2
0.1
20
7.0
5.0
2.0
1.0
0.3 0.5 100.7 1.0 2.0 3.0 5.0
7.0
3.0
t
rr
, REVERSE RECOVERY TIME ( s)
10
TJ
= 25
°C
IF
= 5 A
3 A
1 A
IF
0
IR
trr
Figure 11. Junction Capacitance Figure 12. Forward Recovery Time
VR, REVERSE VOLTAGE (VOLTS)
10
1.0 3.02.0
500
300
200
100
70
50
C, CAPACITANCE (pF)
5.0 507.0
10 20 10030
70
TJ
= 25
°C
0.1
1.0
IF, FORWARD PULSE CURRENT (AMP)
0.7
0.5
0.3
0.2
2.0
, FORWARD RECOVERY TIME ( s)
t
fr
5.0
3.0
1.0
7.0 10
fr
= 1.0 V
TJ
= 25
°C
fr
f
tfr
TJ
= 175
°C
30
700
1000
30
20
fr
= 2.0 V
RS
RL
VO
Figure 13. Single?Phase Half?Wave
Rectifier Circuit
The rectification efficiency factor σ
shown in Figure 9
was calculated using the formula:
σ
P(dc)
P
(rms)
V2o(rms).100%
R
V2o(ac)
V2o(dc)
.100%
L
V2o(dc)
RL
V2o(dc)
(1)
For a sine wave input Vm
sin (wt) to the diode, assumed
lossless, the maximum theoretical
efficiency factor becomes:
σ(sine)
V2m
.100%
4
π2
.100%
40.6% (2)
V2m
2RL
4RL
For a square wave input of amplitude Vm, the efficiency
factor becomes:
σ(square)
RL
V2m.100%
50% (3)
V2m
2
RL
(A full wave circuit has twice these efficiencies)
As the frequency of the input signal is increased, the
reverse recovery time of the diode (Figure 10) becomes
significant, resulting in an increasing AC voltage
component across RL
which is opposite in polarity to the
forward current, thereby reducing the value of the efficiency
factor σ, as shown on Figure 9.
It should be emphasized that Figure 9 shows waveform
efficiency only; it does not provide a measure of diode
losses. Data was obtained by measuring the AC component
of Vo
with a true rms AC voltmeter and the DC component
with a DC voltmeter. The data was used in Equation 1 to
obtain points for Figure 9.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MR7510 | 制造商:CHENYI 制造商全称:Shanghai Lunsure Electronic Tech 功能描述:6Amp rectifier 50-1000 volts |
| MR7510-BP | 功能描述:DIODE STD REC 6A 1000V AXIAL RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
| MR7510FR | 制造商:CHENYI 制造商全称:Shanghai Lunsure Electronic Tech 功能描述:6Amp fast recovery rectifier 50to100 volts |
| MR7510-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:6.0A STANDARD DIODE |
| MR751-BP | 功能描述:DIODE STD REC 6A 100V AXIAL RoHS:是 类别:分离式半导体产品 >> 单二极管/整流器 系列:- 标准包装:100 系列:- 二极管类型:标准 电压 - (Vr)（最大）:50V 电流 - 平均整流 (Io):6A 电压 - 在 If 时为正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢复 = 200mA（Io） 反向恢复时间(trr):300ns 电流 - 在 Vr 时反向漏电:15µA @ 50V 电容@ Vr, F:- 安装类型:底座，接线柱安装 封装/外壳:DO-203AA，DO-4，接线柱 供应商设备封装:DO-203AA 包装:散装 其它名称:*1N3879 |
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