参数资料
型号: MRF1001A
厂商: ADVANCED SEMICONDUCTOR INC
元件分类: 小信号晶体管
英文描述: VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-39
封装: TO-39, 3 PIN
文件页数: 1/1页
文件大小: 63K
代理商: MRF1001A
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
NONE
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BVCEO
IC = 5.0 mA
20
V
BVCBO
IC = 1.0 mA
30
V
BVEBO
IC = 100 A
3.5
V
ICBO
VCB = 10 V
50
A
IEBO
VEB = 3.5 V
100
A
hFE
VCE = 5.0 V
IC = 50 mA
50
300
---
VCE(SAT)
IC = 50 mA
IB = 10 mA
100
V
ft
VCE = 14 V
IC = 90 mA
f = 300 MHz
3.0
GHz
GUmax
MAG
|S21|
2
VCC = 14 V
IC = 90 mA
Pout = 1.0 W
f = 300 MHz
10
11.5
11.7
11.13
dB
NPN SILICON HIGH FREQUENCY TRANSISTOR
MRF1001A
DESCRIPTION:
The
ASI MRF1001A is a High
Frequency Transistor Designed for
Amplifier and Oscillator Applications.
MAXIMUM RATINGS
IC
200 mA
VCE
20 V
PDISS
1.0 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θ
JC
175 °C/W
PACKAGE STYLE TO-39
1 = Emitter
2 = Base
3 = Collector
相关PDF资料
PDF描述
MRF1008MA L BAND, Si, NPN, RF POWER TRANSISTOR
MRF10120 L BAND, Si, NPN, RF POWER TRANSISTOR
MRF10150 L BAND, Si, NPN, RF POWER TRANSISTOR
MRF1029 UHF BAND, Si, NPN, RF POWER TRANSISTOR
MRF1032 UHF BAND, Si, NPN, RF POWER TRANSISTOR
相关代理商/技术参数
参数描述
MRF1002 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS
MRF1002MA 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS
MRF1002MB 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS
MRF10031 功能描述:射频双极电源晶体管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集电极/Base Gain hfe Min:40 最大工作频率:30 MHz 集电极—发射极最大电压 VCEO:25 V 发射极 - 基极电压 VEBO:4 V 集电极连续电流:20 A 最大直流电集电极电流: 功率耗散:250 W 封装 / 箱体:Case 211-11 封装:Tray
MRF1004 制造商:ASI 制造商全称:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR