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参数资料
| 型号： | MRF10120 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, CASE 355C-02, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 128K |
| 代理商： | MRF10120 |
The RF Line
Microwave Long Pulse
Power Transistor
Designed for 960–1215 MHz long pulse common base amplifier applications
such as JTIDS and Mode S transmitters.
Guaranteed Performance @ 1.215 GHz, 36 Vdc
Output Power = 120 Watts Peak
Gain = 7.6 dB Min., 8.5 dB (Typ)
100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input and Output Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
55
Vdc
Collector–Base Voltage
VCBO
55
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Peak (1)
IC
15
Adc
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25
°C
PD
380
2.17
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +200
°C
Junction Temperature
TJ
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (3)
RθJC
0.46
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0)
V(BR)CES
55
—
Vdc
Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0)
V(BR)CBO
55
—
Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
3.5
—
Vdc
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
ICBO
—
25
mAdc
NOTES:
(continued)
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
MRF10120
120 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 355C–02, STYLE 1
Order this document
by MRF10120/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 8
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