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参数资料
| 型号： | MRF10120 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, CASE 355C-02, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 128K |
| 代理商： | MRF10120 |
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
Figure 4. Series Equivalent Input Impedances
Figure 5. Series Equivalent Output Impedance
P
,OUTPUT
POWER
(W
ATTS
pk)
out
200
0
Pin, INPUT POWER (WATTS pk)
150
100
50
0
f = 960 MHz
VCC = 36 V
510
15
20
25
P
,OUTPUT
POWER
(W
ATTS
pk)
out
200
0
Pin, INPUT POWER (WATTS pk)
150
100
50
0
510
15
20
25
f = 1215 MHz
VCC = 36 V
f = 960 MHz
1025
1090
1215
1150
1025
1090
1215
1150
f = 960 MHz
VCC = 36 V, Pout = 120 W
f (MHz)
Zin (OHMS)
960
1025
1090
1150
1215
1.45 + j2.57
2.22 + j2.91
2.77 + j2.80
2.90 + j2.22
2.71 + j1.07
VCC = 36 V, Pout = 120 W
f (MHz)
ZOL* (OHMS)
960
1025
1090
1150
1215
5.33 + j1.37
4.59 - j0.307
3.74 - j0.612
2.43 - j0.492
1.80 - j0.385
ZOL*=Conjugateoftheoptimumloadimpedanceintowhichthedeviceout
put operates at a given output power, voltage and frequency.
3
REV 8
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