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参数资料
| 型号： | MRF10120 |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | HERMETIC SEALED, CASE 355C-02, 2 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 128K |
| 代理商： | MRF10120 |
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
20
—
FUNCTIONAL TESTS (7.0
s Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)
GPB
7.6
8.5
—
dB
Collector Efficiency
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz)
η
50
55
—
%
Load Mismatch
(VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz,
VSWR = 3:1 All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit
Z1–Z9 — Microstrip, See Details
Board Material — Teflon/Glass Laminate,
Dielectric Thickness = 0.030
″,
εr = 2.55, 2 Oz. Copper
C1 — 270 pF 100 Mil Chip Capacitor
C2 — 220 pF 100 Mil Chip Capacitor
C3 — 0.1
F
C4 — 47
F 50 V Electrolytic
L1 — 3 Turns #18 AWG, 1/8
″ ID, 0.18 Long
RF
INPUT
RF
OUTPUT
C1
36 Vdc
+
-
D.U.T.
Z1
+
L1
Z2
Z3
Z4
Z6
Z7
Z8
Z9
Z5
C2
C3
C4
ALL DIMENSIONS IN INCHES
1.00
0.4
0.2
0.15
1.1
0.15
0.3
0.6
0.081
0.91
0.6
0.66
0.55
0.22
1.06
0.52
0.8
0.081
0.05
0.44
0.74
0.3
0.13
2
REV 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF10150 | 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 65V 3PIN CASE 376B-02 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
| MRF1015MA | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF1015MB | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF1015MX | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF1030 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:UHF POWER TRANSISTOR |
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