- 您现在的位置：买卖IC网 > PDF目录378674 > MRF1015MB (MOTOROLA INC) MICROWAVE POWER TRANSISTORS PDF资料下载
参数资料
| 型号： | MRF1015MB |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | MICROWAVE POWER TRANSISTORS |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 110K |
| 代理商： | MRF1015MB |
1
MRF1015MA MRF1015MB
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
The RF Line
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 15 Watts Peak
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCBO
VEBO
IC
PD
60
Vdc
Collector–Base Voltage
60
Vdc
Emitter–Base Voltage
4.0
Vdc
Collector Current — Continuous
1.0
Adc
Total Device Dissipation @ TC = 25
°
C (1)
Derate above 25
°
C
17.5
100
Watts
mW/
°
C
Storage Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R
θ
JC
10
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
hFE
10
40
100
—
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
(continued)
Order this document
by MRF1015MA/D
SEMICONDUCTOR TECHNICAL DATA
15 W (PEAK), 960–1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1015MA
CASE 332A–03, STYLE 1
MRF1015MB
REV 6
相关PDF资料 |
PDF描述 |
|---|---|
| MRF16030 | RF POWER TRANSISTOR NPN SILICON |
| MRF18060ASR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060A | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060ALSR3 | 10 AMP SUBMINIATURE POWER RELAY |
| MRF18060AR3 | RF POWER FIELD EFFECT TRANSISTORS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1015MX | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROWAVE POWER TRANSISTORS |
| MRF1030 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:UHF POWER TRANSISTOR |
| MRF1031 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:UHF POWER TRANSISTOR |
| MRF1035 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:MICROWAVE POWER TRANSISTOR NPN SILICON |
| MRF10350 | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
发布紧急采购，3分钟左右您将得到回复。