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参数资料
| 型号： | MRF1150MB |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.280 INCH, PILL, 4 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 15K |
| 代理商： | MRF1150MB |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/2
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 50 mA
70
V
BVCES
IC = 50 mA
70
V
BVEBO
IE = 5.0 mA
4.0
V
ICBO
VCB = 50 V
10
mA
hFE
VCE = 5.0 V
IC = 5.0 A
10
---
PG
ηηηη
C
VCC = 50 V
POUT = 150 W
f = 1090 MHz
7.8
35
9.8
40
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1150MB
DESCRIPTION:
The
ASI MRF1150MB is Designed
for Class B and C, TACAN, IFF, and
DME Applications up to 1090 MHz.
FEATURES:
Class B and C Operation
Common Base
P
G = 7.8 dB at 150 W/1090 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
12 A
VCB
70 V
PDISS
583 W @ TC = 25°C
TJ
-65
OC to +200 °C
TSTG
-65
OC to +150 °C
θθθθ
JC
0.3
OC/W
PACKAGE STYLE .280 4L PILL
MINIMUM
inches / mm
.004 / 0.10
.275 / 6.99
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.285 / 7.24
.060 . 1.52
.130 / 3.30
.006 / 0.15
inches / mm
1.055 / 26.80
DIM
.220 / 5.59
.230 / 5.84
.118 / 3.00
D
E
F
B
C
A
B
C
E
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