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参数资料
| 型号： | MRF141 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF FIELD-EFFECT POWER TRANSISTOR |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | 0.500 INCH, FM-4 |
| 文件页数： | 1/4页 |
| 文件大小： | 50K |
| 代理商： | MRF141 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
1/4
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
DSS
I
D
= 100 mA
I
DSS
V
DS
= 28 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
= 100 mA V
DS
= 10 V
V
DS(on)
I
D
= 10 A
g
fs
I
D
= 5.0 A
C
iss
C
oss
C
rss
TEST CONDITIONS
MINIMUM
65
TYPICAL
MAXIMUM
UNITS
V
mA
μ
A
V
V
mhos
V
GS
= 0 V
V
GS
= 20 V
5.0
1.0
1.0
5.0
V
GS
= 10 V
V
DS
= 10 V
5.0
5.0
V
DS
= 28 V
V
GS
= 0 V f = 1.0 MHz
350
420
40
20
10
pF
G
ps
V
DD
= 28 V I
DQ
= 250 mA P
out
= 150 W
(PEP)
f = 175 MHz
16
dB
η
IMD
(d3)
IMD
(d11)
V
DD
= 28 V I
DQ
= 250 mA P
out
= 150 W
(PEP)
I
D(max)
= 5.95 A f = 30 to 30.001 MHz
40
-30
-60
-28
%
dB
dB
ψ
V
DD
= 28 V I
DQ
= 250 mA P
out
= 150 W
(PEP)
f
1
=30 to 30.001 MHz
V
SWR
= 30:1
NO DEGRADATION IN OUTPUT POWER
RF FIELD-EFFECT POWER TRANSISTOR
MRF141
DESCRIPTION:
The
MRF141
is a N-Channel
Enhancement-Mode MOSFET
RF Power Transistor Designed for
175 MHz 150 W Transmitter and
Amplifier Applications.
MAXIMUM RATINGS
I
D
16 A
V
DSS
65 V
V
GS
±
40 V
P
DISS
300 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +200 °C
θ
JC
0.6 °C/W
PACKAGE STYLE .500 4L FLG
MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45°
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
D
G
S
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF141G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 28Volt Gain 12dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF141MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1421C | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
| MRF148 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL MOS LINEAR RF POWER FET |
| MRF148A | 功能描述:射频MOSFET电源晶体管 5-175MHz 30Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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