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参数资料
| 型号： | MRF141 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-11, 4 PIN |
| 文件页数： | 9/10页 |
| 文件大小： | 205K |
| 代理商： | MRF141 |
Table 2. Common Source S–Parameters (VDS = 28 V, ID = 5 A) continued
f
S11
S21
S12
S22
f
MHz
|S11|
φ
|S21|
φ
|S12|
φ
|S22|
φ
360
0.967
174
0.21
26
0.060
91
0.978
169
370
0.967
174
0.20
26
0.084
89
1.030
167
380
0.969
173
0.20
23
0.081
82
0.994
170
390
0.970
173
0.19
29
0.072
80
0.963
170
400
0.970
173
0.17
25
0.069
80
0.951
172
410
0.970
172
0.17
27
0.072
71
0.985
167
420
0.972
172
0.16
28
0.078
68
0.970
165
430
0.971
172
0.15
27
0.084
70
0.953
165
440
0.971
171
0.13
29
0.086
74
0.949
168
450
0.971
171
0.15
29
0.087
79
0.962
167
460
0.970
171
0.15
32
0.081
72
0.976
164
470
0.969
170
0.15
29
0.079
65
0.969
164
480
0.964
170
0.16
32
0.081
57
0.972
165
490
0.959
170
0.15
29
0.081
54
0.976
165
500
0.958
170
0.15
21
0.086
58
0.953
167
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal anode gate structure de-
termines the capacitors from gate–to–drain (Cgd), and gate–
to–source (Cgs). The PN junction formed during the
fabrication of the MOSFET results in a junction capacitance
from drain–to–source (Cds).
These capacitances are characterized as input (Ciss), out-
put (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
Cgd
GATE
SOURCE
Cgs
DRAIN
Cds
Ciss = Cgd = Cgs
Coss = Cgd = Cds
Crss = Cgd
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data pres-
ented, Figure 4 may give the designer additional information
on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain cur-
rent level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some ex-
tent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified un-
der specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the MOSFET is a polysilicon material, and is
electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gate of this device is essentially
capacitor. Circuits that leave the gate open–circuited or float-
ing should be avoided. These conditions can result in turn–
on of the device due to voltage build–up on the input
capacitor due to leakage currents or pickup.
Gate Protection — This device does not have an internal
monolithic zener diode from gate–to–source. If gate protec-
tion is required, an external zener diode is recommended.
8
REV 9
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相关代理商/技术参数 |
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|---|---|
| MRF141G | 功能描述:射频MOSFET电源晶体管 5-175MHz 300Watts 28Volt Gain 12dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF141MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1421C | 制造商:New Japan Radio Co Ltd (NJR/JRC) 功能描述: |
| MRF148 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL MOS LINEAR RF POWER FET |
| MRF148A | 功能描述:射频MOSFET电源晶体管 5-175MHz 30Watts 50Volt Gain 18dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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