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参数资料
| 型号： | MRF148A |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-07, 4 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 169K |
| 代理商： | MRF148A |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA)
V(BR)DSS
125
—
Vdc
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
IDSS
—
1.0
mAdc
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 10 mA)
VGS(th)
1.0
2.5
5.0
Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 2.5 A)
VDS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
gfs
0.8
1.2
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
—
62
—
pF
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Coss
—
35
—
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
—
3.0
—
pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(30 MHz)
(VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA)
(175 MHz)
Gps
—
18
15
—
dB
Drain Efficiency
(30 W PEP)
(VDD = 50 V, f = 30 MHz, IDQ = 100 mA)
(30 W CW)
η
—
40
50
—
%
Intermodulation Distortion
(VDD = 50 V, Pout = 30 W (PEP),
f = 30; 30.001 MHz, IDQ = 100 mA)
IMD(d3)
IMD(d11)
—
–35
–60
—
dB
Load Mismatch
(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz,
IDQ = 100 mA, VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 1.0 A)
GPS
IMD(d3)
IMD(d9 – 13)
—
20
–50
–70
—
dB
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 2.0 to 50 MHz Broadband Test Circuit
C1, C2, C3, C4, C5, C6 — 0.1
F Ceramic Chip or Equivalent
C7 — 10
F, 100 V Electrolytic
C8 — 100 pF Dipped Mica
L1 — VK200 20/4B Ferrite Choke or Equivalent (3.0
H)
L2 — Ferrite Bead(s), 2.0
H
R1, R2 — 200
, 1/2 W Carbon
R3 — 4.7
, 1/2 W Carbon
R4 — 470
, 1.0 W Carbon
T1 — 4:1 Impedance Transformer
T2 — 1:2 Impedance Transformer
RF
OUTPUT
RF
INPUT
BIAS
0–10 V
50 V
+
C1
–
+
–
C4
C5
C6
C7
C2
C3
R1
R3
T1
T2
DUT
L1
L2
R4
C8
R2
+
2
Replaces MRF148/D
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相关代理商/技术参数 |
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|---|---|
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