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参数资料
| 型号： | MRF1535FNT1 |
| 厂商： | Motorola, Inc. |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射频功率场效应晶体管 |
| 文件页数： | 7/16页 |
| 文件大小： | 257K |
| 代理商： | MRF1535FNT1 |
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
7
RF Device Data
Freescale Semiconductor
Note: Z
OL
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 19. Series Equivalent Input and Output Impedance
.
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
f
MHz
Z
in
Z
OL
*
135
5.0 + j0.9
1.7 + j0.2
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
. /
1
.
2#
.
155
5.0 + j0.9
1.7 + j0.2
175
3.0 + j1.0
1.3 + j0.1
f
MHz
Z
in
Z
OL
*
450
0.8
j1.4
1.0
j0.8
. /
1
.
2#
.
470
0.9
j1.4
1.1
j0.6
500
1.0
j1.4
1.1
j0.6
5
()
6.
+,-
()
5
)7
+809():
;<=>
;(0;
)';= ;@
7
+809():
;<=>
520
0.9
j1.4
1.1
j0.5
6.
+,-
6 .
+,-
6 .
+,-
6 .
+,-
6 .
+,-
6 .
+,-
6 .
+,-
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1535T1 | RF Power Field Effect Transistor |
| MRF1535NT1 | RF Power Field Effect Transistors |
| MRF1535FT1 | RF Power Field Effect Transistors |
| MRF16006 | RF POWER TRANSISTOR NPN SILICON |
| MRF160 | RF Power FET(射频功率场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1535FT1 | 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| MRF1535N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS FET TO-272N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1535NT1_06 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1535NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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