- 您现在的位置：买卖IC网 > PDF目录371143 > MRF1535T1 (MOTOROLA INC) RF Power Field Effect Transistor PDF资料下载
参数资料
| 型号： | MRF1535T1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA |
| 封装： | PLASTIC, TO-272, CASE 1264-09, 6 PIN |
| 文件页数： | 1/16页 |
| 文件大小： | 257K |
| 代理商： | MRF1535T1 |
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N
Channel Enhancement
Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of these devices
make them ideal for large
signal, common source amplifier applications in
12.5 volt mobile FM equipment.
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 35 Watts
Power Gain — 10.0 dB
Efficiency — 50%
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive
Excellent Thermal Stability
Characterized with Series Equivalent Large
Signal Impedance Parameters
Broadband
Full Power Across the Band: 135
175 MHz
400
470 MHz
450
520 MHz
Broadband UHF/VHF Demonstration Amplifier Information Available
Upon Request
N Suffix Indicates Lead
Free Terminations
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
0.5, +40
Vdc
Gate
Source Voltage
V
GS
±
20
Vdc
Drain Current — Continuous
I
D
6
Adc
Total Device Dissipation @ T
C
= 25
°
C
(1)
Derate above 25
°
C
P
D
135
0.50
W
W/
°
C
Storage Temperature Range
T
stg
65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.90
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22
A113, IPC/JEDEC J
STD
020
1
260
°
C
1. Calculated based on the formula P
D
=
NOTE
CAUTION
MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF1535T1
Rev. 6, 1/2005
Freescale Semiconductor
Technical Data
520 MHz, 35 W, 12.5 V
LATERAL N
CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1264
09, STYLE 1
TO
272
PLASTIC
MRF1535T1(NT1)
MRF1535NT1
MRF1535FNT1
MRF1535T1
MRF1535FT1
CASE 1264A
02, STYLE 1
TO
272 STRAIGHT LEAD
PLASTIC
MRF1535FT1(FNT1)
TJ –TC
R
θ
JC
Freescale Semiconductor, Inc., 2005. All rights reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| MRF1535NT1 | RF Power Field Effect Transistors |
| MRF1535FT1 | RF Power Field Effect Transistors |
| MRF16006 | RF POWER TRANSISTOR NPN SILICON |
| MRF160 | RF Power FET(射频功率场效应管) |
| MRF166C | RF Power FET(射频功率场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF154 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1550FNT1 | 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1550FT1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
发布紧急采购，3分钟左右您将得到回复。