参数资料
型号: MRF1535T1
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: RF Power Field Effect Transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
封装: PLASTIC, TO-272, CASE 1264-09, 6 PIN
文件页数: 7/16页
文件大小: 257K
代理商: MRF1535T1
MRF1535NT1 MRF1535FNT1 MRF1535T1 MRF1535FT1
7
RF Device Data
Freescale Semiconductor
Note: Z
OL
* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 19. Series Equivalent Input and Output Impedance
.
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
f
MHz
Z
in
Z
OL
*
135
5.0 + j0.9
1.7 + j0.2
Z
in
= Complex conjugate of source
impedance.
Z
OL
* = Complex conjugate of the load
impedance at given output power,
voltage, frequency, and
η
D
> 50 %.
. /
1
.
2#
.
155
5.0 + j0.9
1.7 + j0.2
175
3.0 + j1.0
1.3 + j0.1
f
MHz
Z
in
Z
OL
*
450
0.8
j1.4
1.0
j0.8
. /
1
.
2#
.
470
0.9
j1.4
1.1
j0.6
500
1.0
j1.4
1.1
j0.6
5
()
6.
+,-
()
5
)7
+809():
;<=>
;(0;
)';= ;@
7
+809():
;<=>
520
0.9
j1.4
1.1
j0.5
6.
+,-
6 .
+,-
6 .
+,-
6 .
+,-
6 .
+,-
6 .
+,-
6 .
+,-
相关PDF资料
PDF描述
MRF1535NT1 RF Power Field Effect Transistors
MRF1535FT1 RF Power Field Effect Transistors
MRF16006 RF POWER TRANSISTOR NPN SILICON
MRF160 RF Power FET(射频功率场效应管)
MRF166C RF Power FET(射频功率场效应管)
相关代理商/技术参数
参数描述
MRF154 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF154MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF1550FNT1 功能描述:射频MOSFET电源晶体管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF1550FT1 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF1550N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors