参数资料
型号: MRF1535FNT1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
封装: ROHS COMPLIANT, PLASTIC, CASE 1264A-03, 6 PIN
文件页数: 14/19页
文件大小: 658K
代理商: MRF1535FNT1
4
RF Device Data
Freescale Semiconductor
MRF1535NT1 MRF1535FNT1
TYPICAL CHARACTERISTICS, 135 - 175 MHz
Pout, OUTPUT POWER (WATTS)
Figure 4. Gain versus Output Power
Pout, OUTPUT POWER (WATTS)
Figure 5. Drain Efficiency versus Output Power
GAIN
(dB)
Figure 6. Output Power versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 7. Drain Efficiency versus Biasing Current
IDQ, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 9. Drain Efficiency versus Supply Voltage
VDD, SUPPLY VOLTAGE (VOLTS)
P out
,
OUTPUT
POWER
(W
A
TTS)
P out
,
OUTPUT
POWER
(W
A
TTS)
,DRAIN
EFFICIENCY
(%)
h
,DRAIN
EFFICIENCY
(%)
h
,DRAIN
EFFICIENCY
(%)
h
15
40
80
10
70
60
50
14
13
12
11
15
10
70
10
60
50
40
30
20
14
13
12
11
1200
40
80
200
70
60
50
1000
800
600
400
1200
30
50
200
45
40
35
1000
800
600
400
80
30
80
10
70
60
50
40
70
60
50
40
30
20
60
11
19
10
18
17
16
15
14
13
12
50
40
30
20
175 MHz
155 MHz
135 MHz
VDD = 12.5 Vdc
175 MHz
155 MHz
135 MHz
VDD = 12.5 Vdc
175 MHz
155 MHz
135 MHz
VDD = 12.5 Vdc
Pin = 30 dBm
175 MHz
155 MHz
135 MHz
VDD = 12.5 Vdc
Pin = 30 dBm
175 MHz
155 MHz
135 MHz
IDQ = 250 mA
Pin = 30 dBm
175 MHz
155 MHz
135 MHz
IDQ = 250 mA
Pin = 30 dBm
相关PDF资料
PDF描述
MRF1535NT1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1535T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1550FNT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
MRF1550NT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1550FT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相关代理商/技术参数
参数描述
MRF1535FT1 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
MRF1535N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1535NT1 功能描述:射频MOSFET电源晶体管 RF LDMOS FET TO-272N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF1535NT1_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1535NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs