参数资料
型号: MRF1535FNT1
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 功率晶体管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
封装: ROHS COMPLIANT, PLASTIC, CASE 1264A-03, 6 PIN
文件页数: 17/19页
文件大小: 658K
代理商: MRF1535FNT1
MRF1535NT1 MRF1535FNT1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
109
107
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
100
120
140
160
180
200
Figure 19. MTTF Factor versus Junction Temperature
108
相关PDF资料
PDF描述
MRF1535NT1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1535T1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1550FNT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272BA
MRF1550NT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272AA
MRF1550FT1 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相关代理商/技术参数
参数描述
MRF1535FT1 制造商:Freescale Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:
MRF1535N 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1535NT1 功能描述:射频MOSFET电源晶体管 RF LDMOS FET TO-272N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF1535NT1_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1535NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs