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| 型号： | MRF1550NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 1/18页 |
| 文件大小： | 461K |
| 描述： | IC MOSFET RF N-CHAN TO272-6 WRAP |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 175MHz |
| 增益： | 14.5dB |
| 电压 - 测试： | 12.5V |
| 额定电流： | 12A |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 50W |
| 电压 - 额定： | 40V |
| 封装/外壳： | TO-272AA |
| 供应商设备封装： | TO-272-6 |
| 包装： | 标准包装 |
| 其它名称： | MRF1550NT1DKR |
MRF1550NT1 MRF1550FNT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies to 175 MHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common source amplifier applications in
12.5 volt mobile FM equipment.
?
Specified Performance @ 175 MHz, 12.5 Volts
Output Power ? 50 Watts
Power Gain ? 14.5 dB
Efficiency ? 55%
?
Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive
Features
?
Excellent Thermal Stability
?
Characterized with Series Equivalent Large-Signal Impedance Parameters
?
Broadband-Full Power Across the Band: 135-175 MHz
?
200C Capable Plastic Package
?
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
?
In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +40
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Drain Current ? Continuous
ID
12
Adc
Total Device Dissipation @ TC
= 25
°C (1)
Derate above 25°C
PD
165
0.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value(2)
Unit
Thermal Resistance, Junction to Case
RθJC
0.75
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
1. Calculated based on the formula PD
=
TJ?TC
RθJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE - CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Document Number: MRF1550N
Rev. 15, 6/2009
Freescale Semiconductor
Technical Data
175 MHz, 50 W, 12.5 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
MRF1550NT1
MRF1550FNT1
CASE 1264-10, STYLE 1
TO-272-6 WRAP
PLASTIC
MRF1550NT1
CASE 1264A-03, STYLE 1
TO-272-6
PLASTIC
MRF1550FNT1
?
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF1550NT1_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550T | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550T1 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF157 | 功能描述:射频MOSFET电源晶体管 5-80MHz 600Watts 50Volt Gain 21dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF1570FNT1 | 功能描述:射频MOSFET电源晶体管 RF LDMOS TO272-6N FLAT RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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