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参数资料
型号： MRF171A
厂商： MOTOROLA INC
元件分类： 功率晶体管
英文描述： RF MOSFET(射频MOS场效应管)
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装： CASE 211-07, 4 PIN
文件页数： 1/12页
文件大小： 283K
代理商： MRF171A
Motorola, Inc. 1999
1
MRF171A
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages from
30–200 MHz.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
Low Crss – 8 pF @ V
DS
= 28 V
Gold Top Metal
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) –32 dB (Typ)
http://motorola.com/sps/rf/designtds/
MAXIMUM RATINGS
Rating
Symbol
V
DSS
V
DGR
V
GS
I
D
P
D
Value
65
Unit
Vdc
Drain–Gate Voltage
Drain–Gate Voltage (R
GS
= 1.0 M
)
Gate–Source Voltage
65
±
20
4.5
Vdc
Adc
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
Adc
115
0.66
Watts
W/
°
C
°
C
°
C
Storage Temperature Range
T
stg
T
J
–65 to +150
Operating Junction Temperature
200
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
θ
JC
Max
1.52
Unit
°
C/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(I
D
= 50 mA, V
GS
= 0)
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 28 V)
Gate–Source Leakage Current
(V
GS
= 20 V, V
DS
= 0)
Symbol
Min
Typ
Max
Unit
V
(BR)DSS
65
80
—
Vdc
I
DSS
—
—
1.0
mAdc
I
GSS
—
—
1.0
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF171A/D
SEMICONDUCTOR TECHNICAL DATA
45 W, 150 MHz
MOSFET BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
D
G
S
REV 2
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相关代理商/技术参数
参数描述
MRF171AMP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF172 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF173 功能描述:射频MOSFET电源晶体管 5-175MHz 80Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF173CQ 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 9A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF173MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
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