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参数资料
| 型号： | MRF171A |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-07, 4 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 225K |
| 代理商： | MRF171A |
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages from
30–200 MHz.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 45 Watts
Power Gain = 17 dB (Min)
Efficiency = 60% (Min)
Excellent Thermal Stability, Ideally Suited for Class A Operation
Facilitates Manual Gain Control, ALC and Modulation Techniques
100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR
Low Crss – 8 pF @ VDS = 28 V
Gold Top Metal
Typical Data For Power Amplifier Applications in Industrial,
Commercial and Amateur Radio Equipment
Typical Performance at 30 MHz, 28 Vdc
Output Power = 30 Watts (PEP)
Power Gain = 20 dB (Typ)
Efficiency = 50% (Typ)
IMD(d3) (30 Watts PEP) –32 dB (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDSS
65
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS
±20
Adc
Drain Current — Continuous
ID
4.5
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
115
0.66
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.52
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(ID = 50 mA, VGS = 0)
V(BR)DSS
65
80
—
Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 28 V)
IDSS
—
1.0
mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
1.0
Adc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF171A
45 W, 150 MHz
MOSFET BROADBAND
RF POWER FET
CASE 211–07, STYLE 2
D
G
S
Order this document
by MRF171A/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF171AMP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF172 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF173 | 功能描述:射频MOSFET电源晶体管 5-175MHz 80Watts 28Volt Gain 13dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF173CQ | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 9A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF173MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
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