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参数资料
| 型号： | MRF185 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | NI-860, CASE 375B-04, 5 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 523K |
| 代理商： | MRF185 |
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
1
MRF185
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
High Gain, Rugged Device
Broadband Performance from HF to 1 GHz
Bottom Side Source Eliminates DC Isolators, Reducing Common Mode
Inductances
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
250
1.45
Watts
W/
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1 mAdc)
V(BR)DSS
65
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
–
1
Adc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
–
1
Adc
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF185/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF185
1.0 GHz, 85 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 375B–04, STYLE 1
NI–860
Motorola, Inc. 2002
D
G
S
(FLANGE)
D
G
REV 5
Archived 2005
A
R
C
H
IV
E
D
2
0
5
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|---|---|
| MRF19030R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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| MRF19085LS | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF19085S | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF185_02 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFET |
| MRF186 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
| MRF187 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187R3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF187S | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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