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参数资料
| 型号： | MRF173 |
| 元件分类： | 功率晶体管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 211-11, 4 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 147K |
| 代理商： | MRF173 |
The RF MOSFET Line
RF Power
Field Effect Transistor
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
this device make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 11 dB (13 dB Typ)
Efficiency = 55% Min. (60% Typ)
Low Thermal Resistance
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
Excellent Thermal Stability; Suited for Class A Operation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
VDGO
65
Vdc
Gate–Source Voltage
VGS
±40
Vdc
Drain Current — Continuous
ID
9.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
220
1.26
Watts
W/
°C
Storage Temperature Range
Tstg
–65 to +150
°C
Operating Temperature Range
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.8
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA
V(BR)DSS
65
—
V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V)
IDSS
—
2.0
mA
Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V)
IGSS
—
1.0
A
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA)
VGS(th)
1.0
3.0
6.0
V
Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A)
VDS(on)
—
1.4
V
Forward Transconductance (VDS = 10 V, ID = 2.0 A)
gfs
1.8
2.2
—
mhos
(continued)
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF173
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 211–11, STYLE 2
D
S
G
Order this document
by MRF173/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF173CQ | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 9A - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF173MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF174 | 功能描述:射频MOSFET电源晶体管 RF Transistor RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF175GU | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 26A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF175GU1111 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
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