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参数资料
| 型号： | MRF175GU |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 183K |
| 代理商： | MRF175GU |
1
MRF175GU MRF175GV
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
100% Ruggedness Tested At Rated Output Power
Low Thermal Resistance
Low Crss — 20 pF Typ @ VDS = 28 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M
)
Gate–Source Voltage
65
Vdc
VGS
ID
PD
±
40
Vdc
Drain Current — Continuous
26
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
400
2.27
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
0.44
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
65
—
—
Vdc
IDSS
—
—
2.5
mAdc
IGSS
—
—
1.0
μ
Adc
(continued)
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF175GU/D
SEMICONDUCTOR TECHNICAL DATA
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
CASE 375–04, STYLE 2
D
G
S
(FLANGE)
D
G
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| MRF175GV | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF175LU | N-CHANNEL BROADBAND RF POWER FETs |
| MRF175LV | N-CHANNEL BROADBAND RF POWER FETs |
| MRF176GU | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176 | N-CHANNEL MOS BROADBAND RF POWER FETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF175GU1111 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF175GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 26A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF175LU | 功能描述:射频MOSFET电源晶体管 400MHz 28Volt 100W Gain 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF175LV | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
| MRF176 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
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