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参数资料
| 型号： | MRF175GU |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/1页 |
| 文件大小： | 32K |
| 代理商： | MRF175GU |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
NONE
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
V(BR)DSS
ID = 50 mA
VGS = 0 V
65
V
IDSS
VDS = 28 V
VGS = 0 V
2.5
mA
IGSS
VDS = 0 V
VGS = 20 V
1.0
A
VGS(th)
ID =100 mA
VDS = 10 V
1.0
3.0
6.0
V
VDS(on)
ID = 5.0 A
VGS = 10 V
1.5
V
gfs
ID = 2.5 A
VDS = 10 V
2.0
3.0
mhos
Ciss
Coss
Crss
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
180
200
20
pF
Gps
η
ψ
VDD = 28 V
IDQ = 2 X 100 mA
POUT = 150 W
f = 400 MHz
10
50
10:1
12
55
---
dB
%
---
RF POWER FIELD-EFFECT TRANSISTOR
MRF175GU
DESCRIPTION:
The
ASI MRF175GU is a N-Channel
Enhancement-Mode Push Pull
MOSFET, Designed for FM, and TV
Solid State Transmitter Applications up
to 500 MHz.
MAXIMUM RATINGS
ID
26 A
VDSS
65 V
PDISS
400 W @ TC = 25
OC
TJ
-65
OC to +200 OC
TSTG
-65
OC to +150 OC
θ
JC
0.44
OC/W
PACKAGE STYLE
1 = DRAIN
2 = DRAIN(2)
3 = GATE(1)
4 = GATE(2)
5 = SOURCE (1&2) -CASE
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF175GU1111 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF175GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 65V 26A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF175LU | 功能描述:射频MOSFET电源晶体管 400MHz 28Volt 100W Gain 10dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF175LV | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
| MRF176 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
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