- 您现在的位置：买卖IC网 > PDF目录379326 > MRF175LU (MOTOROLA INC) N-CHANNEL BROADBAND RF POWER FETs PDF资料下载
参数资料
| 型号： | MRF175LU |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER FETs |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封装： | CASE 333-04, 4 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 183K |
| 代理商： | MRF175LU |
MRF175GU MRF175GV
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
(1)
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
DYNAMIC CHARACTERISTICS
(1)
VGS(th)
VDS(on)
gfs
1.0
3.0
6.0
Vdc
0.1
0.9
1.5
Vdc
2.0
3.0
—
mhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS — MRF175GV
(2)
(Figure 1)
Ciss
Coss
Crss
—
180
—
pF
—
200
—
pF
—
20
—
pF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
Gps
12
14
—
dB
η
55
65
—
%
ψ
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
Figure 1. 225 MHz Test Circuit
C1 — Arco 404, 8.0–60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1
μ
F Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
C10 — 0.47
μ
F Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 —
Wound, 1/4
″
I.D.
L2 — Ferrite Beads of Suitable Material for
L2 —
1.5–2.0
μ
H Total Inductance
Board material — .062
″
fiberglass (G10),
Two sided, 1 oz. copper,
ε
r
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
5
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 —
Can Be Made of 25 Ohm Semirigid Coax,
T1 —
47–52 Mils O.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 —
Can Be Made of 15–18 Ohms Semirigid
T2 —
Coax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE:
with ferrite toroids or beads to increase the common
NOTE:
mode inductance. For operation below 100 MHz. The
NOTE:
same is required for the output transformer.
BIAS 0–6 V
R1
C3
C4
R2
C1
C2
T1
C5
D.U.T.
C6
T2
C7
L1
C8
C9
L2
C10
+
–
28 V
相关PDF资料 |
PDF描述 |
|---|---|
| MRF175LV | N-CHANNEL BROADBAND RF POWER FETs |
| MRF176GU | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176 | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176GV | N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF177 | N-CHANNEL BROADBAND RF POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF175LV | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:N-CHANNEL BROADBAND RF POWER FETs |
| MRF176 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-CHANNEL MOS BROADBAND RF POWER FETs |
| MRF176GU | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF176GV | 制造商:M/A-COM Technology Solutions 功能描述:TRANS MOSFET N-CH 125V 16A 5PIN P-218 - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF177 | 功能描述:射频MOSFET电源晶体管 5-400MHz 100Watts 28Volt Gain 12dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。