- 您现在的位置：买卖IC网 > PDF目录379326 > MRF176GV (MOTOROLA INC) N-CHANNEL MOS BROADBAND RF POWER FETs PDF资料下载
参数资料
| 型号： | MRF176GV |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 177K |
| 代理商： | MRF176GV |
1
MRF176GU MRF176GV
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
Electrical Performance
MRF176GU @ 50 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ
MRF176GV @ 50 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ
100% Ruggedness Tested At Rated Output Power
Low Thermal Resistance
Low Crss — 7.0 pF Typ @ VDS = 50 V
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
125
Vdc
Gate–Source Voltage
±
40
Vdc
Drain Current — Continuous
16
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
400
2.27
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.44
°
C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 mA)
V(BR)DSS
125
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
IDSS
—
—
2.5
mAdc
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
IGSS
—
—
1.0
μ
Adc
NOTE:
1. Each side of device measured separately.
Order this document
by MRF176GU/D
SEMICONDUCTOR TECHNICAL DATA
200/150 W, 50 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
CASE 375–04, STYLE 2
D
G
S
(FLANGE)
D
G
REV 8
相关PDF资料 |
PDF描述 |
|---|---|
| MRF177 | N-CHANNEL BROADBAND RF POWER MOSFET |
| MRF182 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF182S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183 | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
| MRF183S | LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF177 | 功能描述:射频MOSFET电源晶体管 5-400MHz 100Watts 28Volt Gain 12dB RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF18030A | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18030ALR3 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF18030ALSR3 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF18030ALSR5 | 功能描述:IC MOSFET RF N-CHAN NI-400S RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
发布紧急采购，3分钟左右您将得到回复。