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参数资料
| 型号： | MRF176GV |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-CHANNEL MOS BROADBAND RF POWER FETs |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 8/10页 |
| 文件大小： | 177K |
| 代理商： | MRF176GV |
MRF176GU MRF176GV
8
MOTOROLA RF DEVICE DATA
UHF power amplifier applications. Motorola RF MOSFETs
feature a vertical structure with a planar design, thus avoid-
ing the processing difficulties associated with V–groove
MOS power FETs.
Motorola Application Note AN211A, FETs in Theory and
Practice, is suggested reading for those not familiar with the
construction and characteristics of FETs.
The major advantages of RF power FETs include high
gain, low noise, simple bias systems, relative immunity from
thermal runaway, and the ability to withstand severely mis-
matched loads without suffering damage. Power output can
be varied over a wide range with a low power dc control sig-
nal, thus facilitating manual gain control, ALC and modula-
tion.
DC BIAS
The MRF176G is an enhancement mode FET and, there-
fore, does not conduct when drain voltage is applied. Drain
current flows when a positive voltage is applied to the gate.
RF power FETs require forward bias for optimum perfor-
mance. The value of quiescent drain current (IDQ) is not criti-
cal for many applications. The MRF176G was characterized
at IDQ = 100 mA, each side, which is the suggested minimum
value of IDQ. For special applications such as linear amplifi-
cation, IDQ may have to be selected to optimize the critical
parameters.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may be just a simple resistive divid-
er network. Some applications may require a more elaborate
bias sytem.
GAIN CONTROL
Power output of the MRF176 may be controlled from its
rated value down to zero (negative gain) by varying the dc
gate voltage. This feature facilitates the design of manual
gain control, AGC/ALC and modulation systems.
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