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参数资料
| 型号： | MRF18060ALR3 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/13页 |
| 文件大小： | 686K |
| 描述： | IC MOSFET RF N-CHAN NI-780 |
| 标准包装： | 250 |
| 晶体管类型： | LDMOS |
| 频率： | 1.81GHz |
| 增益： | 13dB |
| 电压 - 测试： | 26V |
| 额定电流： | 6µA |
| 电流 - 测试： | 500mA |
| 功率 - 输出： | 60W |
| 电压 - 额定： | 65V |
| 封装/外壳： | NI-780 |
| 供应商设备封装： | NI-780 |
| 包装： | 带卷 (TR) |
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RF Device Data
Freescale Semiconductor
MRF18060ALR3 MRF18060ALSR3
Table 4. Electrical Characteristics
(TC
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
=10μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=26Vdc,VGS
=0Vdc)
IDSS
?
?
6
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 300
μAdc)
VGS(th)
2
?
4
Vdc
Gate Quiescent Voltage
(VDS
=26Vdc,ID
= 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=2Adc)
VDS(on)
?
0.27
?
Vdc
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package)
(1)
(VDS
=26Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Ciss
?
160
?
pF
Output Capacitance
(1)
(VDS
=26Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
740
?
pF
Reverse Transfer Capacitance
(VDS
=26Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
2.7
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Common--Source Amplifier Power Gain @ 60 W
(2)
(VDD
=26Vdc,IDQ
= 500 mA, f = 1805 -- 1880 MHz)
Gps
11.5
13
?
dB
Drain Efficiency @ 60 W
(2)
(VDD
=26Vdc,IDQ
= 500 mA, f = 1805 -- 1880 MHz)
η
43
45
?
%
Input Return Loss
(2)
(VDD
=26Vdc,Pout
=60WCW,IDQ
= 500 mA,
f = 1805 -- 1880 MHz)
IRL
?
?
-- 1 0
dB
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1800 band, ensuring
batch--to--batch consistency.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MRF18060ALR3_08 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF18060ALR5 | 功能描述:射频MOSFET电源晶体管 60W GSM 1.8GHZ RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MRF18060ALSR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060AR3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060AS | 制造商:Motorola Inc 功能描述:MOSFET Transistor, N-Channel, SOT-391BVAR |
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