参数资料
型号: MRF18060AS
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封装: CASE 465A-06, 3 PIN
文件页数: 2/6页
文件大小: 0K
代理商: MRF18060AS
MRF18060A MRF18060AR3 MRF18060AS MRF18060ASR3
5.2–214
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 Adc)
V(BR)DSS
65
Vdc
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
6
Adc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 Adc)
VGS(th)
2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
0.27
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
4.7
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
160
pF
Output Capacitance (1)
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
740
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
2.7
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1805 – 1880 MHz)
Gps
11.5
13
dB
Drain Efficiency @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1805 – 1880 MHz)
η
43
45
%
Input Return Loss (2)
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1805 – 1880 MHz)
IRL
–10
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
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